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FQN1N60CTA

Manufacturer:

On Semiconductor

Mfr.Part #:

FQN1N60CTA

Datasheet:
Description:

MOSFETs TO-92-3 Through Hole N-Channel number of channels:1 1 W 600 V Continuous Drain Current (ID):300 mA 6.2 nC

ParameterValue
Length5.2 mm
Width4.19 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance11.5 Ω
Height5.33 mm
PackagingAmmo Pack
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation1 W
Power Dissipation1 W
Threshold Voltage4 V
Number of Channels1
Input capacitance470 pF
Continuous Drain Current (ID)300 mA
Rds On Max50 mΩ
Drain to Source Voltage (Vdss)600 V
Turn-On Delay Time7 ns
Turn-Off Delay Time13 ns
Element ConfigurationSingle
Fall Time27 ns
Rise Time21 ns
Gate Charge6.2 nC
Drain to Source Resistance9.3 Ω
Gate to Source Voltage (Vgs)30 V
Drain to Source Breakdown Voltage (Vds)600 V
Schedule B8541290080
Gate to Source Threshold Voltage2 V
FET Type(Transistor Polarity)N-Channel

Stock: 4951

Distributors
pcbx
Unit Price$0.49415
Ext.Price$0.49415
QtyUnit PriceExt.Price
1$0.49415$0.49415
10$0.30692$3.06920
50$0.25200$12.60000
100$0.20690$20.69000
500$0.16671$83.35500
1000$0.15047$150.47000
3000$0.12140$364.20000